| A novel empirical bipolar large-signal modeling method is proposed. This technique considerably reduces the extraction and modeling effort, compared to traditional large-signal models, while retaining a high degree of accuracy. The proposed model is unified, i.e. it predicts the DC, small and large signal performance of the device. It has been validated for InGaP/GaAs HBT, Si-BJT and SiGe HBT devices.; The design of power amplifiers in SiGe HBT technology is investigated. A 2.4 GHz high-efficiency SiGe HBT-LTCC power amplifier module is presented, whose performance is comparable to that achieved previously only in GaAs-based technologies. The design of power amplifiers in low breakdown voltage SiGe HBT technology, at low supply voltages is investigated. A 2.5 V, 1.9 GHz power amplifier in a low breakdown voltage (BVCEO = 3 V, BVCBO = 7 V) SiGe HBT technology is demonstrated. Novel biasing and ballasting techniques are proposed for SiGe HBT power amplifiers.; The work described in the dissertation significantly advances the state-of-the-art in bipolar large-signal modeling and power amplifier design. The contributions and implications of this work for future research are discussed. |
