| A comprehensive stochastic model is built to compute the local image formation in high-energy lithography processes. This includes a study on electron-photoresist interaction by applying the method of virtual quanta, a Direct Monte-Carlo simulation for modeling electron scattering process in the resist, and a simple model to create the polymer chains. Furthermore, a mapping technique is built to sample the related events from DMC calculation onto discrete sites of polymers, so that, for the first time, we could show how scission event locations on individual monomers can be found by first principle calculation. From this, local molecular weight statistics is obtained directly by “counting” scissions events and measuring polymer chain lengths. Different types of features can be modeled accurately. Finally, a Line Edge Roughness study on different dose modulations predicts correctly the decrease of LER with improved image modulation. |
