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Transient and frequency domain analysis of multiconductor, multi-level microstrips and discontinuities

Posted on:2000-05-05Degree:Ph.DType:Dissertation
University:Arizona State UniversityCandidate:Gilb, James P. KFull Text:PDF
GTID:1468390014961852Subject:Engineering
Abstract/Summary:PDF Full Text Request
Multi-level, multi-conductor, planar transmission lines and discontinuities such as those found in high-speed, high-density digital integrated circuits and Microwave (MIC's) and Millimeter-Wave Integrated Circuits (MMIC's) are studied using the Spectral Domain Approach (SDA). The transient analysis of coupling and distortion on multi-level, multi-conductor interconnects is formulated by characterizing the independent propagating modes with the SDA and using a Fourier transform approach to compute the time-domain response. Crosstalk reduction in high-speed, high-density digital interconnects is also discussed, emphasizing the use of substrate-compensated low-coupling structures. Low-coupling structures implemented with symmetric coupled lines, asymmetric lines and multi-line structures are presented to show the applicability of this approach. A closed-form expression for the effective relative dielectric constant of a two-layer microstrip line suitable for the Computer Aided Design (CAD) is derived from data computed with the SDA. The dielectric losses in multi-layer, multi-conductor structures are simulated with both a full-wave approach and an approximate formula that is valid for low-loss structures. Results for slow-wave microstrips lines using Metal-Insulator-Semiconductor (MIS) configuration are given over a wide range of frequency and typical substrate configurations. The SDA is extended to handle three-dimensional simulation of complex planar transmission line structures. This formulation is used to investigate the interactions of discontinuities on different levels in MMIC's, as well as those in digital interconnects...
Keywords/Search Tags:Digital, Lines, SDA
PDF Full Text Request
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