| Magnetic semiconductors are of interest for use in non-volatile memory device read heads, magnetoresistive sensors, and other spintronic devices. Research in this area has mostly focused on generating magnetic semiconductors by doping non-magnetic semiconductors with magnetic ions. This work has instead taken advantage of the defectinduced magnetism in several semiconducting oxides. The planar Hall effect (PHE) is a phenomenon that can be used for characterizing magnetic semiconductors. Along with the anisotropic magnetoresistance (AMR), PHE has the potential to provide insight into the mechanism for magnetic behavior in magnetic conducting oxide thin films that are undoped. PHE has therefore been studied in undoped ZnO, SnO2, CdO, and CuO using magnetotransport and magnetometry techniques. The measurements included both AMR and PHE taken at various temperatures from 300 to 4.2K in a Quantum Design Physical Property Measurement System (QD-PPMS) and in a custom-built magnetotransport set-up. Complementary measurements include XRD, and resistivity measurements. Resistivity vs. temperature, Hall effect, and magnetoresistance measurements were performed in the PPMS. Magnetic hysteresis and magnetization vs. temperature were acquired using a Quantum Design Magnetic Properties Measurement System (QD-MPMS). |
