| Barium magnesium tetrafluorine (BMTF) was deposited on p type silicon and silicon dioxide followed with the deposition of aluminum on BMTF to form capacitor test structures. The BMTF deposited was examined with Auger, X-ray Diffraction, and X-ray Photoemission Spectroscopy. The material analysis indicated the films were fluorine deficient and barium rich. The test structures were characterized for current versus voltage, using a quasi-static and a ramped signal method. A high frequency capacitance versus voltage measurement was used, in addition, to characterize the test structures. The results from the current measurements showed BMTF was conductive and exhibited a space-charge-limited current. The BMTF was incorporated into the gate structure of a field effect transistor (FET) to form a nondestructive read out (NDRO) device. The FET with BMTF on silicon dioxide performed well but the retention of the device was limited to 70 seconds. An alternate method to deposit BMTF with a Metal Organic Deposition technique was also investigated. |
