| Spectroscopic ellipsometry is shown in this study to have the capability (i) to characterize damaged structure, (ii) to determine the composition and structure of nonstoichiometric compounds, (iii) to follow the evolution of interfaces and recrystallization process on heat treatment, and (iv) to detect extremely thin layer and/or transitional regions between different layers.;In the case of c-Si implanted with carbon ions the regression analysis of SE data was shown to be able to distinguish the chemical mixture of silicon and implanted carbon against the physical mixture of silicon and silicon carbide. The recrystallization of Si and the formation of crystalline silicon carbide on annealing at high temperature were investigated.;Virgin and germanium implanted crystalline silicon samples oxidized at high temperatures were examined. The interposing layer between the oxide and the silicon substrate was found to be composed of a thin layer of crystalline germanium-silicon alloy Ge;The single crystal silicon samples implanted with oxygen ions were analyzed. In the as-implanted state, the thickness and the understoichiometric oxide compound SiO;Depth profiling of silicon monoxide film on vitreous silica reveals the inhomogeneity of the oxygen concentration in the film. The composition x in the nonstoichiometric silicon oxide, SiO... |
