| Thin film SiO;Values of the Si-O-Si bridging bond angle between corner connected SiO;I demonstrate, using the Clausius-Mossotti relationship, that molar volume changes in thermally grown SiO;I further demonstrate that the silicon-silicon distance can be used as a microscopic strain coordinate. The slope of the experimental intrinsic stress vs. strain curve was shown to yield a value for the plane strain Young's modulus, E/(1-;I have established that the most important factor in determining the local atomic structure of SiO;An integrated processing system for low temperature remote PECVD deposition of dielectric films has been constructed. Semiconductor surface cleaning, remote PECVD deposition, and analysis capabilities are integrated in a common vacuum environment. I have devised a post-deposition furnace annealing process for remote PECVD SiO... |
