| A two-dimensional, fully elliptic model has been developed to solve the nonlinear, coupled transport equations with chemical kinetics governing the deposition of gallium arsenide in a horizontal metalorganic chemical vapor deposition reactor. The effects of thermal diffusion and multicomponent diffusion have been studied. In addition to the finite rate chemistry, the two extremes of chemical reactions, chemically frozen flow and chemical equilibrium have been considered. Nonrectangular channel reactors are solved by mapping the nonrectangular physical coordinates onto a rectangular computational domain. Adaptive gridding is used to obtain high resolution of the solution in areas of high spatial activity without an excess of grid points. The boundary conditions in the model are flexible to permit the effects of different assumptions about the boundaries to be studied. |
