Studies of aluminum-oxide thin films: Chemical vapor deposition and optical characterisation

A new CVD system, based on reaction between methylaluminum dichloride and oxygen, is introduced for the fabrication of thin-film aluminum oxide. This novel process succeeds at producing high quality films at growth rates from 80 A/sec for substrate temperatures in the range 450;Growth rate information obtained from the optical modelling is consolidated into a kinetic description of the deposition process. A simple model which describes adequately the peak growth rate as a function of input reactant concentrations and temperature is presented. Additional channels are next introduced into the kinetic mechanism; the ensuing analysis reveals a partitioning of the overall mechanism and clarifies the limitations associated with the experiment.;An interesting device application for these films is that of a barrier to the diffusion of sodium ions. Real samples demonstrate excellent performance. The advantages and disadvantages of the new deposition process are discussed in view of other potential applications.;A major goal of this work is to demonstrate the usefulness of spectroscopic ellipsometry as a non-destructive characterisation method for thin transparent films on transparent glass substrates of only slightly lower reflective index. Quantitative modelling of the optical spectra is examined in detail.