| Indentations in (100) and (111) p- and n-type Cz silicon were made as a function of the concentration of electrolytic solutions (NaCl, CaCl(,2), FeCl(,3), NaBr, and NaI), indentation load, and temperature.; A minimum in microhardness as a function of concentration was observed. The radial crack length and damage size of the etched indentation were measured using SEM and optical microscopy. A maximum in radial crack length and damage size was observed in 10('-3) M/l solutions. (100) n-type Silicon with different electrical resistivities was studied to predict the influence of temperature on both the radial crack length and damage size. Above about 200 C, the radial crack length increased at a load of 2N, but decreased with temperature below 1N. It appears that brittle elastic fracture competes with plasticity in the ductile to brittle transition temperature. The behavior of the indentation damage size vs temperature was found to be proportional to the space charge length. The experimental data of damage size vs. temperature was consistent with theoretical calculations.; (100) p-type GaAs was indented as a function of temperature. Hardness was found to increase with temperature. The radial crack length varied with orientation. This led to the conclusion that dislocation mobilities vary with orientation and control the radial crack length. |
