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Raman scattering and photoluminescence of III/V compound semiconductors grown by organometallic vapor phase epitaxy

Posted on:1989-05-25Degree:Ph.DType:Dissertation
University:The University of UtahCandidate:Cherng, Ya-TungFull Text:PDF
GTID:1479390017454871Subject:Engineering
Abstract/Summary:
The lattice dynamic properties of GaPSb, InPSb and InAsSb have been investigated for the first time by using Raman scattering measurements. The first order Raman spectra for GaPSb and InPSb show two-mode behavior over the whole composition range. On the other hand, the spectra of InAsSb in the optical phonon frequency range show one + two mode behavior.; The first order optical phonons for AlGaInP alloys show a three mode behavior corresponding to the three binary compositions, with AlP-, GaP-, and InP-like phonons. For the first time, we have investigated the lattice dynamics of the quaternary alloy GaInAsSb with composition inside the miscibility gap. Pseudo two mode behavior is observed in the composition range studied, with GaAs- and GaSb+InAs- like characteristics.; We report the results of Raman scattering studies of InP/GaInAs/InP single quantum well structures grown by atmospheric pressure organometallic vapor phase spetaxy. The optical phonon modes with well thicknesses from 3 to 100 A were clearly observed. Both GaAs-like and InAs-like modes shift to lower frequencies compared to bulk GaInAs which may be due to optical phonon confinement or local electrical field change. The GaAs-like mode intensity is attenuated with decreased well thickness; the InAs-like LO mode is dominant at the interface.; The 10 K energy band gap as a function of composition for both GaP{dollar}sb{lcub}1-rm x{rcub}{dollar}Sb{dollar}sb{lcub}rm x{rcub}{dollar}, and InP{dollar}sb{lcub}1-rm x{rcub}{dollar}Sb{dollar}sb{lcub}rm x{rcub}{dollar} ternary systems have been determined from photoluminescence measurements, X-ray diffraction, and electron microprobe analysis. The bowing parameter for the K = 0, {dollar}Gamma{dollar}, band gap energy of GaP{dollar}sb{lcub}1-rm x{rcub}{dollar}Sb{dollar}sb{lcub}rm x{rcub}{dollar} is 3.8 eV. For the high-phosphorus, indirect alloys, the bowing parameter is tentatively established to be 2.7 eV. For InP{dollar}sb{lcub}1-rm x{rcub}{dollar}Sb{dollar}sb{lcub}rm x{rcub}{dollar}, where the band gap is always direct, the bowing parameter is estimated to be 1.9 ev.
Keywords/Search Tags:Raman scattering, X{rcub}{dollar}sb{dollar}sb{lcub}rm x{rcub}{dollar}, Gap, Bowing parameter, First
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