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Study On Preparation, Properties And Mechanism Of BaTiO3/BaBiO3 Thermal Sensitive Composite Materials

Posted on:2008-07-30Degree:DoctorType:Dissertation
Country:ChinaCandidate:Y LuoFull Text:PDF
GTID:1481302450481224Subject:Materials Processing Engineering
Abstract/Summary:PDF Full Text Request
According to the latest development and shortcoming of thermosensitive materials, the effects of the BaBiO3 content in BaTiO3/BaBiO3 composites on the phase composition, microstructure, electrical properties and conducting mechanisms of composites were investigated by using the differential thermal analysis (DTA), X-ray diffraction (XRD) , scanning electron microscope (SEM) ,energy spectrum analysis and a electrical property test apparatus. The semiconducting mechanisms of BaTiO3-based ceramics with low BaBiO3 content and conducting mechanisms of BaTiO3/BaBiO3 composites with high BaBiO3 content were put forward respectively in this paper. The microstructure and electrical properties of BaTiO3-based PTCR ceramics with donor dopant BaBiO3, acceptor dopant Mn(NO3)2 and sintering aids AST phase were systemically investigated. And the microstructure and electrical properties of BaTiO3/BaBiO3 NTC composites doped with rare earth oxide were systemically investigated. The results showed as the following:The effect of the BaBiO3 content on the electrical properties of BaTiO3/BaBiO3 composites was systemically investigated for the first time. BaTiO3-based ceramics showed good semiconducting effect doped with low BaBiO3 content after sintering at 1300?. With an increase in BaBiO3 content the room temperature resistivity for BaTiO3-based ceramics decreased to a minimal value and then began to increase, and the minimal value was about 5?·cm. BaTiO3-based ceramics doped with BaBiO3 showed PTC effect. However BaTiO3/BaBiO3 composites only showed negative temperature coefficient (NTC) effect with high BaBiO3 content sintering at high temperature. With an increase in BaBiO3 content the room temperature resistivity for BaTiO3/BaBiO3 composites decreased and thermal sensitivity coefficient for that remained constant.The semiconducting mechanisms of BaTiO3-based ceramics with low BaBiO3 content were put forward for the first time. BaBiO3 contains bismuth ions of different oxidation states (+3 and +5). As the elements for achieving semiconducting grains, Bi3+ substitute for Ba ions in the lattices and Bi5+ substituted for Ti ions. With an increase in BaBiO3 content the room temperature resistivity for BaTiO3-based ceramics decreased and an electric compensation had in effect in this process. However with an further increase in BaBiO3 content the room temperature resistivity for BaTiO3-based ceramics began to increased and an vacancy compensation had in effect in this process.The NTC effect mechanisms of BaTiO3/BaBiO3 composites with high BaBiO3 content were put forward for the first time. And the percolation model for BaTiO3/BaBiO3 composites was built. BaTiO3/BaBiO3 composites showing NTC effect is attributed to the fact that BaBiO3 is semiconducting materials. BaTiO3/BaBiO3 composites were mixtures of BaTiO3 and BaBiO3 in extreme disorder. BaBiO3 is dispersed network phase in BaTiO3/BaBiO3 composites with low BaBiO3 content. The resistivity for BaTiO3/BaBiO3 composites approached to the value of insulator. With an increase in BaBiO3 content BaBiO3 phases connect to each other to lead to low resistivity for BaTiO3/BaBiO3 composites.One kind of dopant method was put forward for semiconducting BaTiO3-based PTCR ceramics for the first time, namely donor dopants can supply two kinds of different valence state (+3 and +5) ions whose radius are equal to the radius of Ba2+ and Ti4+ respectively. In the same technological condition semiconducting degree for BaTiO3-based ceramics was checked on base of same Bi content in Bi2O3 and BaBiO3 dopants. And the results showed that the room temperature resistivity for BaTiO3-based ceramics doped with BaBiO3 was about half as big as that doped with Bi2O3.The effect of different donor dopants, acceptor dopants, sintering aids and sintering technology on the microstructure and electrical properties of BaTiO3-based PTCR ceramics was systemically investigated. As a donor dopant, BaBiO3, Ba2LaBiO6 and BaNb2Bi2O9 can supply two different kinds of cations in valence which substituted for Ba2+ and Ti4+ respectively. And doped- ceramics showed good electrical properties. The effect of content of them on the microstructure and electrical properties of ceramics were similar. And with an increase in donor dopants mean grains of ceramics decreased in size, while the room temperature of ceramics decreased to minimal value and then began to increase.The matter between grains consisted of acceptor and AST phase. Given the content of BaBiO3 and AST phase in ceramics and the sintering technology, with an increase in Mn(NO3)2 content coarse and fine grains are even distribution and the area of fine grains trended to larger. While the lift-drag ratio of ceramics quickly increase and then remained constant with an increase in Mn(NO3)2 content. Given the content of BaBiO3 and Mn(NO3)2 in ceramics and the sintering technology, with an increase in AST phase the mean grains of ceramics increased in size and the room temperature resistivity of ceramics monotonously increased.The electrical properties of BaTiO3-based PTCR ceramics are sensitive to sintering technology. Given the technological conditions, with an increase in sintering temperature the room temperature resistivity of ceramics decreased to minimal value and then began to increase and the mean grains of ceramics increased in size. With an increase in soaking time and cooling rate the room temperature resistivity of ceramics decreased to minimal value and then began to increase and the microstructure of ceramics was not sensitive to the soaking time and cooling rate.The effect of rare earth oxides on the phase composition, microstructure and electrical properties for BaTiO3/BaBiO3 composites was investigated for the first time. The mechanism of action for rare earth oxides in BaTiO3/BaBiO3 composites was studied. BaTiO3/BaBiO3 composites doped with Y2O3, CeO2 and La2O3 respectively was sintered at high temperature, rare earth cations were soluted into BaBiO3 phases. When sintering temperature was very high, the mean grains of composites decreased to minimal value and then began to increase with an increase in Y2O3 content. However when sintering temperature was low, the microstructure of composites consisted of particles which remained unchanged in size with an increase in CeO2 or La2O3 content. Y2O3 and La2O3 are trivalent oxides and the effect of them on the electrical properties of composites is similar that the room temperature resistivity of composites decreased to minimal value and began to increase with an increase in rare earth oxides content. CeO2 is tetravalent oxide and the room temperature resistivity of composites increased with an increase in CeO2 content.The effect of Nb5+, La3+ and K+ ions on the crystal structure and electrical properties for BaBiO3 compounds was systemically investigated for the first time respectively. The mechanism of action for dopant ions in BaBiO3 compounds was studied. With an increase in dopant ions the lattice parameters and unit cell volume of BaBiO3 solid solution doped with Nb5+, La3+ and K+ ions regularly changed. The effect of Nb5+, La3+ and K+ ions on the electrical properties of BaBiO3 solid solution was not similar respectively. With an increase in Nb5+ content the room temperature resistivity of BaBiO3 solid solution increased. However With an increase in La3+ or K+ content the room temperature resistivity of BaBiO3 solid solution decreased to minimal value and then began to increase.
Keywords/Search Tags:BaTiO3, BaBiO3, semiconducting, thermal sensitive ceramic, electrical property
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