| Chalcogenide,such as ZnS/Se,has been widely used in optical sensing,testing and manufacturing due to their advantages of fast optical response time,low optical loss and low phonon energy.However,the development of simple function chalcogenide materials has encountered many tricky problems in recent years,such as the length of light-emitting wave,poor material stability,single application performance,etc.Therefore,many researchers began to work on the research of material modification,to upgrade the performance of materials and introduce new characteristics.At present,the doping different elements is the main method,especially the co-doping with two or more elements.In most of the doperable ions,the optical properties of chalcogenide materials can be enhanced and extended by introducing Co because of its rich absorption,emission energy levels and magnetism.At the same time,as a wide band gap semiconductor(4.9 eV)material,the electrical and luminous properties of Ga2O3 have always been the focus of attention.Of course,the photoelectric performance can be improved by doping the semiconductor oxide Ga2O3.However,there are still many problems in the current research.Firstly,the co-doped ions usually exist in the elements with relatively similar properties,such as Co and Fe,which makes the main characteristics of the doped elements conflict.Secondly,the doping concentration is low,the doping degree of elements is not high,and the preparation effect is poor.Then,various models of material research are not enough to form a complete research path.Finally,the problems of single doping method,its application scope is too small,and there is no substantive breakthrough.In fact,in order to solve the above problems,it is necessary to conduct a more in-depth research on the way of material performance combination,to conduct a more detailed study on the doping performance of elements,and to take a more innovative doping way to obtain better Co doped composite materials.In order to solve these problems,and to obtain new materials with wide spectrum and multi-functional applications,the research work in this paper is mainly from the following aspects:1.The Co)x(Ga2O3)0.6-x(ZnS/Se)0.4(x=0.1,0.3,0.5) sulfur based composite ceramics were prepared via solid-phase sintering,and their physical properties were studied.Firstly,the influence of sintering temperature on the basic properties(size shrinkage,mass loss rate and molar mass ratio)of ceramics was studied.Then,the related physical properties of the material were characterized,including structural characteristics,optical properties and surface morphology.The results show that the designed material is consistent with the original design,and it has good optical properties covering from visible light area to mid infrared area.At the same time,it can be used as a source material for subsequent preparation of various nano materials.2.The (Co)x(Ga2O3)0.6-x(ZnS/Se)0.4(x=0.1,0.3,0.5) sulfur based composite nano films were prepared by pulsed laser deposition,and their physical properties were studied.In this part,we have conducted in-depth,systematic and comprehensive research on the new functional materials,which are as follows:the first step is to keep the materials unchanged,the ratio unchanged and the conditions changed to obtain the best doping ratio;the second step is to keep the materials unchanged,the conditions unchanged and the ratio changed to obtain the best doping ratio;the third step is to keep the conditions unchanged,the ratio unchanged and the materials changed The best application direction has been obtained.We have a deep understanding of the nano film materials we prepared and developed.The chalcogenide composite semiconductors have excellent optical and electrical properties,and have potential applications in optoelectronic field.3.The shuttle-shaped and circular-shaped (Co)x(Ga2O3)0.6-x(ZnS/Se)0.4 nanoparticles were prepared by MPPLA,and their physical properties were compared.The formation mechanism and growth process of particles with different shapes were studied.The crystal structure of all nanoparticles was confirmed by X-ray diffraction(XRD).Raman spectra show the bonding vibration information of multi doped elements.The results also show that the closer the concentration of Co and Ga is,the more frequent the transition of multi-level orbit is.In addition,X-ray photoelectron spectroscopy(XPS)shows that Co and Ga exist in the form of +2 and +3.The morphology of nanoparticles was characterized by transmission electron microscopy,which showed the effectiveness of the new method.The physical model of the influence of magnetic field on plasma plume is established,and the formation of spindles is explained.Finally,the optical properties of the nanoparticles are tested.The results show that the fluorescence spectrum of the nanoparticles can be changed regularly according to the change of the material composition.4.A dual wavelength nanolaser with graphene nanohole array filled with (Co)Ga2O30.6-x(ZnS/Se)0.4 nanoparticles were fabricated by pulse laser interference ablation.In this part,we mainly introduce the preparation of graphene nanohole array dual wavelength laser in the near infrared band.By adjusting the optical path,the laser with ns-scale is used to realize three beams interference,which greatly reduces the research cost.At the same time,the nanopore array was fabricated by three laser interference etching technology,its diameter is 1?m,and graphene was coated on the nanopore array of photoresist by PLD method,which is an innovative method to prepare graphene from the target with structure.The modulation effect of graphene on PL spectrum was confirmed.Then,we propose a new nano technology,called pole pulling nano filling technology,which is used to fill nano particles with different Co and Ga concentrations into the hole as the nano gain medium of the nano laser.Most importantly,at room temperature,double wavelength laser radiation at 868 and 903 nm has been measured.This research provides experimental and theoretical support and reference for the application of (Co)x(Ga2O3)0.6-x(ZnS/Se)0.4 materials in optoelectronic devices. |
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