| The advancement of science and technology has accelerated the development of the semiconductor industry,and as a result,the performance requirements for semiconductor thin films are increasing.Although electronic semiconductors are widely used in many fields,the development of their corresponding hole-type semiconductors has been hampered by localized O 2p orbitals.The introduction of the chemical modulation of the valence band(CMVB)hypothesis creates opportunities for the use of hole-type semiconductors in real-world applications.In recent years,the semiconductor thin films represented by hole-type Cu-based delafossite have been extensively studied and achieved fruitful results.Cu-based delafossite thin films mainly include CuAlO2,CuCrO2,CuFeO2 and CuRhO2,etc.,which have a wide application prospect in the fields of transparent conduction,semiconductor heterojunction and energy conversion.However,there are still some pressing issues in the study of Cubased delafossite thin films.These issues primarily relate to:1)Lack of an efficient method for producing high-quality Cu-based delafossite oxide epitaxial thin films;2)Lack of heterostructures construction and performance optimization based on highquality Cu-based delafossite thin films;and 3)Exploration and performance monitoring of new Cu-based delafossite oxide thin films.In light of the aforementioned issues,this paper investigates a non-vacuum method for producing high-quality CuCrO2 epitaxial thin films,and constructs the transparent heterojunction and self-rectifying resistive devices based on CuCrO2 thin films,and explores a new type of CuRhO2 thin film’s process and performance.The following are the primary research findings:(1)Preparation and electrical transport properties of CuCrO2 epitaxial thin filmsHigh-quality epitaxial CuCrO2 thin film was prepared on single crystal Al2O3(000l)substrates by chemical solution deposition and layer-by-layer annealing.The effects of Mg dopants on the microstructure,optical and electrical properties of CuCrO2 epitaxial thin film were systematically studied.The hole-type conduction mechanism of CuCrO2 and Mg-doped CuCrO2 epitaxial films at high and low temperature was elucidated.(2)Fabrication of p-CuCrO2/n-Si heterojunction and study of self-rectifying resistive switching effectAu/p-CuCrO2/n-Si self-rectifying resistive memory was constructed on n-Si substrate by chemical solution deposition.The crystal structure and surface morphology of CuCrO2 thin film grown on Si substrate were analyzed.The rectification performance and resistive switching performance of Au/CuCrO2/n-Si heterojunction were systematically studied,and the mechanisms of the two behaviors were explained.(3)The construction and rectification performance of p-CuCrO2/n-In2O3 transparent heteroj unctionThe p-CuCrO2/n-In2O3 heterojunction was constructed on ITO substrate by chemical solution deposition.The effects of thermodynamic parameters on the microstructure of In2O3 thin films and the electrical and optical properties of p-CuCrO2/n-In2O3 heterojunctions were systematically investigated.The performance of p-CuCrO2/nIn2O3 heterojunction was effectively regulated.In addition,the mechanism of heterojunction rectification behavior is explained.(4)Preparation and thermal transport properties of CuRh1-xMgxO2 thin filmsThe c-axis oriented CuRhO2 thin film were prepared on single crystal Al2O3(000l)substrates by chemical solution deposition method.The microstructure,electrical characteristics,and thermoelectric conversion properties of CuRhO2 thin films were all carefully examined in relation to the impacts of Mg doping.The results show that Mg doping results in the decreased Seebeck coefficient while greatly improved conductivity of the prepared thin films,which verifies the effectively improved thermoelectric performance. |
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