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Magnetic And Magnetoelectric Transport Properties Of FexGeTe2(x=3,5) And Fe3GeTe2/PtTe2 Heterostructures

Posted on:2024-08-28Degree:DoctorType:Dissertation
Country:ChinaCandidate:J J GuoFull Text:PDF
GTID:1520307310972279Subject:Condensed matter physics
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In recent years,the research of two-dimensional van der Waals(2D vd W)magnetic materials has made breakthrough progress.Specially,the 2D vd W magnetic material Fex GeTe2(x=3,4,5)has shown promising applications in magnetic storage and 2D spintronic devices for its Curie temperature(Tc)up to room temperature,strong magneto-crystalline anisotropy and metallic conductivity.However,the demagnetization process of FexGeTe2(x=3,4,5)materials has not been clearly studied,whether magnetic regulation can be achieved by simple interface modification,the spin orbital moment can be observed on the monolayer material are still need to be investigated.As for the 2D vd W Dirac semimetallic material Pt Te2,it can be a good source of spin flow because of its strong spin-orbit coupling(SOC)and chiral spin structure.However,whether the anisotropic magnetoresistance and planar Hall resistance of Pt Te2are contributed by chiral anomalies has not been studied.Meanwhile,spin orbit torque and the use of spin orbit torque to manipulate magnetic states are very important research topics in spintronics,and most of the research in this field has focused on heavy metal/ferromagnet heterojunction system.So the search for new material systems with strong spin-orbit coupling in all-2D vd W heterojunctions is crucial for the development of new 2D spintronic devices.Therefore,this dissertation investigates the magnetic and magnetoelectric transport properties of Fex GeTe2(x=3,5),Pt Te2,and Fe3GeTe2/Pt Te2 heterojunctions,and the main research contents and conclusions are as follows:1.The magnetic and magnetoelectric transport properties of Fe3GeTe2single crystal were investigated.It is demonstrated that:(1)Fe3GeTe2 has strong vertical magnetic crystal anisotropy with a Tc of about 200 K.The demagnetization process and coercivity(Hc)of Fe3GeTe2 exhibit significant thickness and temperature dependence.For Fe3GeTe2 bulk samples,the Hc and remanence are small,and the demagnetization process is the formation of multi-domain structure and the evolution of magnetic field.For Fe3GeTe2 nanosheet samples,the hysteresis loops have a rectangular shape at low temperatures,and the demagnetization process is a single-domain flipping process with Hc determined by the nucleation field,while the demagnetization process gradually changes from a single-domain process to a multi-domain flipping process with Hc determined by the pinning mechanism of the domain walls at increasing temperatures.The Hc of Fe3GeTe2 nanosheets increases rapidly with decreasing thickness due to the change of magnetization reversal mechanism.(2)The polyvinyl alcohol(PVA)electrolyte has a significant modulation effect on the Hc and anomalous Hall resistance(RH)of Fe3GeTe2 nanosheets,and PVA-covered Fe3GeTe2 nanosheets reduce the Hc by about 20%and increase the RH by about 40%.2.The magnetic properties and spin-orbit moment of Fe5GeTe2 single crystal were investigated.It is demonstrated that:(1)Fe5GeTe2 single crystal bulk has vertical magnetic crystal anisotropy with the Tc exceeding room temperature.The spin reorientation phase transition,which changes the direction of easy magnetization from perpendicular to in-plane with decreasing temperature,originates from the competition between magnetic dipole interaction energy and perpendicular magnetic crystal anisotropy energy.(2)A novel phenomenon is observed on the RH of Fe5GeTe2 as the temperature changes.RH increases first with decreasing temperature and reaches a maximum around 110 K,and then RH decreases with further decreasing temperature.The uncommon phenomenon of RH variation with temperature originates from the ferromagnetic-subferromagnetic phase transition of Fe5GeTe2 near 110 K.(3)The second harmonic measurement reveal that the Fe5GeTe2 monolayer nanosheet has a spin-orbit moment and the sign of the spin-orbit moment coefficient changes around 110 K.3.The anisotropic magnetoresistance and planar Hall resistance of type-II Dirac semimetals Pt Te2 were investigated,and the magnetic and magnetoelectric transport properties of Fe3GeTe2/Pt Te2 heterostructures were investigated.It is demonstrated that:(1)Pt Te2 has positive magnetoresistance and the contribution of chiral anomalies to the magnetoresistance is excluded.The first-principles calculation results suggest that the Dirac point of Pt Te2 is about 0.67 e V below the Fermi energy level,and thus the contribution of chiral anomaly to magnetoresistance is weak and the Fermi surface has strong anisotropy.Therefore,the strong anisotropic magnetoresistance and planar Hall resistance of Pt Te2 originate from the anisotropic orbital magnetoresistance.(2)The Hc of the Fe3GeTe2/Pt Te2 heterostructure decreases with increasing current,which is due to the undesirable contact between the two layers of Pt Te2 and Fe3GeTe2 in the heterostructure,the high interfacial resistance and the low thermal conductivity of the 2D material.Therefore,the Joule heat generated by the current accumulates at the Fe3GeTe2/Pt Te2 interface and cannot be removed in time,causing the material temperature to increase,the magnetic properties of Fe3GeTe2 to change,and the Hc to decrease.(3)When investigating the spin-orbit moment of Fe3GeTe2/Pt Te2 heterostructure by the second harmonic,a harmonic signal similar to SOT is observed,and the damping-like field and field-like field are calculated based on the heterostructure with out-of-plane anisotropy.
Keywords/Search Tags:magnetism, anisotropic magnetoresistance, anomalous Hall effect, two-dimensional magnetic materials, heterostructure
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