The Study Of Luminescence Regulation And L-Band Amplification Of Erbium Ion

In few decades,luminescence of rare earth and other disciplines have been developed into an important research field.Optoelectronic materials with rare earth ions doped ferroelectric materials and glass materials have become the basic materials to promote informatization.The development of large-capacity optical communication technology puts forward new requirements for the working bandwidth of optoelectronic devices.Therefore,it is of great significance to precisely control the luminescence properties of Er³⁺in optoelectronic devices by realizing the wavelength frequency-shift and extending bandwidth.The preparation method of Er³⁺doped materials was introduced in the thesis.Usually,Er³⁺was doped into ferroelectrics and optical fibers by sol-gel method and modified chemical vapor deposition technology,respectively.The doping mechanism of rare earth ions and energy level transition of Er³⁺were introduced.Subsequently,the regulation mechanism of Er³⁺emission peak position in barium titanate,the inhibition of Er³⁺temperature quenching effect and the expansion of gain bandwidth in the L-band were focus to investigate.Barium titanate can realize the crystal transformation from tetragonal crystal phase to cubic crystal phase with the induction of temperature,which changes the symmetry of Er³⁺coordination field.It promotes the luminescence peak of ⁴I_13/2→⁴I_15/2 shifts from 1530 nm to 1543 nm with the effect of phase transition.Additionally,the cubic phase expends the full width half maximum of Er³⁺at high temperature,which was increased by 5～8 nm and the maximum was 85 nm.The temperature quenching of Er³⁺is the key factor limiting the application of erbium-doped devices.The study found that the introduction of Zr⁴⁺into barium titanate effectively improved the luminescence efficiency of Er³⁺.Further experimental results showed that the fluorescence intensity of Er³⁺at 534 nm and 563 nm was increased by 8.47 times and 6.9times with the increase of Zr⁴⁺concentration.An appropriate concentration of Zr⁴⁺inhibited the temperature quenching of Er³⁺in different wavelength bands.Low concentration of Zr⁴⁺suppressed the temperature quenching in the visible-light band.With the increase of temperature,the emission intensity of ²H_11/2→⁴I_15/2 was enhanced by 5.6 times,and that of⁴S_3/2→⁴I_15/2 was increased by 2 times.More importantly,it was found that increasing the concentration of Zr⁴⁺suppressed the temperature quenching of Er³⁺in the near-infrared band,which increased the emission intensity of ⁴I_13/2→⁴I_15/2 by 31%at 200℃.Additionally,the L-band gain extension of Er³⁺is the key to improve the application of erbium-doped materials in optical communication.The development of space communication also requires erbium-doped fibers to have both extended gain and radiation resistance.Multicomponent silica-based fibers were prepared by modified chemical vapor deposition and liquid-phase doping technology,including Er³⁺/Ce³⁺/P⁵⁺co-doped silica-based fibers,Er³⁺/Zr⁴⁺/P⁵⁺co-doped silica-based fibers,and Er³⁺/Ce³⁺/P⁵⁺/Al³⁺co-doped silica-based fiber,etc.The signal excited state absorption in the Er³⁺level transition suppresses the L-band gain expansion.Benefiting from the change of the coordination field and the energy transfer between the co-doped ions,the gain range of the L-band can be extended to 1624.7 nm.The co-doping of Ce³⁺and P⁵⁺ions effectively suppressed signal excited state absorption.In the 500 Gy irradiation environment,the Er³⁺/Ce³⁺/P⁵⁺/Al³⁺co-doped silica-based fiber extended the L-band gain range to 1624.6 nm reaching 25 d B,which met the communication needs in the low-orbit space irradiation environment.