Research On Key Technologies Of Dual-Band Millimeter-Wave Receiver In CMOS

With the continuous pursuit of data transmission rate,wireless communication technology is planning and developing to higher frequency bands.Wireless communication in millimeter wave band has attracted much attention because of its advantages of large bandwidth,high data rate and low delay.It has been applied in aerospace radar,automotive radar,satellite communication,the fifth generation mobile communication network and other fields.In order to deal with the application scheme of multiple frequency bands and further improve the data rate and network capacity,the multi-band receiver architecture has attracted high attention in scientific research domain and commercial field.The CMOS technology is becoming more popular in the process competition of high-speed communication chips due to its high integration and low cost.With the development of CMOS technology,its performance in high-frequency analog integrated circuits has been significantly improved.And a growing number of high-speed integrated circuit processes are transferred to CMOS technology.Therefore,the research of millimeter-wave multiband receiver circuit based on CMOS technology has great significance.This thesis researches dual-band receiver architecture,and a concurrent dual-band receiver architecture based on complex mixing structure is proposed.The emphases of this thesis are the dual-band low noise amplifier(LNA)and mixer which are the key modules in concurrent dual-band receiver.The optimization techniques of the key figures are proposed to guide the low noise design of broadband LNA and the high linearity design of Mixer.Based on the TSMC 65 nm CMOS process,a concurrent dual-band LNA and a mixer for 28G/39 GHz are fabricated and measured.This thesis proposes a compact concurrent dual-band receiver architecture based on the principle analysis of image rejection structure and complex mixing structure.The proposed structure uses orthogonal complex mixing analog circuit to generate I/Q signals,and then combines them in the digital domain using two different ways to generate two IF signals which corresponds to the different RF signals.Thus,it completes the downward shift of the signals in two bands simultaneously.This architecture reduces the complexity of analog module in the dual-band receiver.The hardware cost in analog domain is the same as the single band complex mixing receiver.This thesis describes the basic design principle of LNAs,researches the characteristics and application scenarios of various LNA topologies,and proposes a concurrent dual-band LNA with broadband noise matching network.The proposed LNA adopts shunt-series feedback broadband input network and coupled resonator dual-band load to amplify the 28G/39 GHz signals simultaneously,while being insensitive to other signals.The influence of transformer shunt-series feedback input network on the performances of LNA is deeply studied,and a broadband input network with improved noise matching is proposed,decreasing the noise figure of LNA.Based on TSMC 65 nm CMOS process,a 28G/39 GHz concurrent dual-band LNA is fabricated.Under 1V supply voltage,the power consumption is 14.4m W,and the input reflection coefficient at 28G～39GHz is lower than-10 d B.The power gains of the two bands are 18.1d B and 18.4d B respectively.The noise figure is 3.1d B/3.8d B,and the input1 d B compression point is-21.1d Bm/-20.9d Bm.Compared with state-of-the-art dual-band LNAs,this LNA has the best Fo M.And it is still competitive compared with the narrowband LNAs.This thesis describes the basic principle of the mixer and analyzes the Gilbert mixer whose overall performance is excellent.The focus is on three related circuit modules: input transconductance stage,local oscillator signal buffer,and linearity optimization auxiliary circuit.The current reused transconductance stage is adopted to achieve the input impedance matching,transconductance enhancement and the flexible current distribution.The active LO buffer circuit is designed to provide LO signal amplification,single-to-differential signal conversion and impedance matching of the LO port.Linearity optimization technologies are researched and a "post distortion" method is proposed to improve the linearity of the mixer.Compared with the traditional post distortion technology,this method can improve the input third-order intercept point(IIP3)of the circuit without suppressing the gain.Based on TSMC65 nm CMOS process,a Gilbert mixer that can simultaneously process 28G/39 GHz signals is fabricated.It operates under 1V voltage supply and consumes 26.2m W power.Driven by a-5d Bm LO signal(33.25GHz),the mixer is tested and the 28G/39 GHz RF signals are down converted to 5.25G/5.75 GHz.The conversion gain is 5.4d B/6.5d B and IIP3 is2.3d Bm/6.5d Bm respectively.