Study On Preparation And Structure Properties Of SiC Films By Sputtering

SiC films were deposited by substrate bias-assisted RF sputtering on single crystals Si(100) wafers, quartz wafers and stainless steel. The microcrystalline films (cubic phase, f3-SiC) have been prepared successfully without heating the substrates. The effects of parameters on the film growth were studied. The result showed that a higher bias is helpful to induce the crystal film growth and constrain the formation of amorphous carbon and SiO,. Moreover, it was found that a higher RF power is also helpful for the film growth, and the threshold of RF power for remarkable sputtering is 130W. Although the films showed (111) textured characteristic under available biases, however the characteristic disappeared with increasing the substrate temperature. With a two-stage process self-developed, the quality of the films was greatly improved. The so-called two-stage process is separated into a high bias one for nucleation and a low bias one for growth. The UV-Visible transmission and reflection spectra were measured using Shimadzu UV-3 101 spectrophotometer. Both of the absorption coefficient (cr) and optical band gap (Eg) were calculated from the transmission and reflection spectra of the films. It was observed that Eg ranged from 2.0eV to 3.6eV, decreased with an increase in bias, and increased with increasing the substrate temperature. As a multiple interface was deposited on stainless steel before depositing the films, it was noted that the adhesion of the films to stainless steel was improved significantly. The impermeability to tritium of the films was studied. The result indicated that the films have an excellence performance for the impermeability to tritium. The PRF increased when increasing the RF power, which was enhanced to 4 orders even though at 5000C.