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The Influence Of Microwave Power And Annealing Temperature On Structures And Properties Of A-C:F,H Films

Posted on:2003-07-05Degree:MasterType:Thesis
Country:ChinaCandidate:F HuangFull Text:PDF
GTID:2120360065960356Subject:Condensed matter physics
Abstract/Summary:PDF Full Text Request
Fluorinated amorphous carbon films have been deposited in microwave electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) system using CF4 and C6H6 as sources gases. The films as-deposited were annealed in vacuum. The film thickness was measured by an ET-350 micro figure measuring instrument surfcorder, and the bond configuration was analyzed through fourier-transform infrared spectrometer (FTIR) and X-ray photoelectron spectroscopy (XPS). The optical and dielectric property was examined separately by ultraviolet-visible transmittance spectrum (UV-VIS) and capacitance -voltage (C-V) characteristic. The influence of microwave power and annealing temperature on these structures and properties were our focus investigation.The results show that higher microwave power corresponds to higher crosslinking , higher dielectric constant and lower optical gap. After annealing, the films become thinner for the desorption of weak bond group, which arouses the increase of crosslinking and the decrease of optical gap. The transgression of Fluorine from the film after annealing causes the increase of dielectric constant . While the increase of dielectricwastage origins from the increase of leakage conductance and delay mechanism.
Keywords/Search Tags:ECR-CVD, microwave power, annealing temperature
PDF Full Text Request
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