The Effect Of Annealing To The Stability Of Lead Film, Electron States In Lead Film And Manipulate Mass Atoms Using STM

In this dissertation, electron growth of the aluminum film, the evolvement of the lead film when annealed from LT to RT and the electron states in lead film were studied using MBE STM UPS. In addition, manipulate many atoms also was studied by STM.In the experiment of making atomically flat aluminum film using the two step growth, we firstly studied the evolvement of the aluminum film deposited on Si (111) -7 7 surface at LT by RHEED, and get the critical thickness of the aluminum film(4ML). We explain this phenomenon using the electron growth mode from the energy and using transient mobility and downward funneling from the process of film forming. The competition of the transition mobility and the downward funneling make aluminum film form at 4ML. The energy of the electrons in the film is minimum when film is more 4ML according to the electron growth mode, then the critical thickness of the aluminum film in Al/Si system is 4ML. Our results unambiguously explain why QWS could be observed only for the films with 4ML or over 4ML aluminum in this system.In the experiment of depositing lead film on Si (111) - 7 7, we studied the effect of annealing and the coverage to the stability and the growth mode of the film and found that when film get thicker, the stability of the film is different: When thethickness of the film is lower than 6ML, film can not form at LT; 6ML-10ML, film form at LT, but get islands when annealed to RT; more 10ML, film is stable during annealing. In addition, the growth mode of the film annealed to RT is different, thinner than 10ML, film can not form at RT; 10ML-20ML, the growth mode is two layers by two layers; more 20ML, the growth mode is layer by layer mode. We improved electron growth mode and explain this phenomenon. The total energy of the film not only include quantum well states and electron spilling, but also include the contribution of the temperature, when we plus the contribution of the temperature in total energy, the critical thickness of the film will change, then the critical thickness of the lead film we deposit is 6ML at 145K and 10ML at RT. In addition, we studied the roughness of the film is how to effect the peak of the QWS and found that when film is rough, the peak is wide, and when film is flat, the peak is sharp.Free energy cost from surface steps provides the usual driving force for smoothening metallic film on a substrate. For very thin films, quantum size effect (QSE) can become dominant in the evolution of the film geometry, leading to distinctive consequences such as the formation of films only with specific thicknesses. In this experiment we exploit the competition between these two effects to manipulate mass transport involving millions of lead atoms on Si(111)-77 surface and build up pre-designed nanostructures with atomic-layer precision using a scanning tunneling microscope (STM). Like a nanoscale free energy pendulum, the system studied exhibits an intriguing morphological dynamics, swinging between two extreme states favored by each of these effects. Using this method we also can getisland pattern that we want.In summary, we get atomically flat aluminum film and the critical thickness (4ML), in lead film deposited on Si, we improve electron growth mode and get the critical thickness of the lead film at 145K and RT, in addition, using STM and UPS, we get when film is rough, the QWS in photoemission spectroscopy is wide, and when film is flat, sharp. By STM and kinetic pathway, we successfully manipulate mass atoms on lead islands with atomically layer precision.