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Study On The Technique Of Ion Implantation By Strong Electric Field At The Normal Pressure

Posted on:2004-01-21Degree:MasterType:Thesis
Country:ChinaCandidate:B XuFull Text:PDF
GTID:2120360155964819Subject:Environmental Science
Abstract/Summary:PDF Full Text Request
Great achievements, especially in agriculture and breeding, have been attained since last century when Ion Implantation Technology has been applied in biological engineering. A new breeding method—ion implantation mutation breeding integrated with ion implantation transgenic technique, has thus been introduced. However, the application of the new method is limited by the present facilities. This thesis intends to realize the ion implantation at normal pressure by utilizing medium barrier discharge in narrow discharge gap to obtain an ultra-strong electric field, which will impart the electrons with average energe of 10-16ev, enough for impact ionization of most atoms and molecules of gaseity. The huge amount of ion bundles will be implanted with targeted molecule to change the molecule structure so as to make the corps or themicroorganism mutate.The experiment examines influence of the ion implantation in ultra-strong electric field in nitrogen at normal pressure on the solid sodium formate and sodium acetate. It also checks the influence of ion implantation in ultra-strong electric field in nitrogen or mixed nitrogen and hydrogen at normal pressure on the medium humid sodium acetate. The result proves the applicability of the ion implantation at normal pressure. Based on the research data, there is a larger amount of amido produced by the medium humid sodium acetate than by the solid sodium acetate. And after having implanted the ions, the transforming rate of PPA to L-Phe by the zymolysis of E coli raises by 20%.
Keywords/Search Tags:Ion Implantation at the Normal Pressure, Dielectric Barrier Discharge, Sodium Acetate, Sodium benzoate, Mutation Breeding
PDF Full Text Request
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