| A new type inductively coupled plasma (ICP) source enhanced with magnetic field was studied by emission spectra methodology, The results showed the power limit which the ICP source transform to high density state became smaller, and the uniformity and controlling of ICP became better when magnetic field was used in ICP. The spectrum of N+ and N was distinguished using the results of simulation, we found that dissociation degree of N2 and ionization degree would rise with magnetic field. Comparison of spectrum intensity for three kind of antenna showed the helix antenna excitated most high plasma density, but the stabilization was worst.Using on-line measurement of plasma emission spectra plasma during reactive magnetron sputtering, growth of ZnO films was studied with the variation of O2 flow and the deposition temperature, ranging from room temperature to 750℃ and comparing the results of two type power sources. The results showed O2 flow to be important in the determination of sputtering yield of Zn target. When the flow ratio of O2 to Ar+ O2 > 0.75%, the sputtering yield of Zn. decreased linearly with increasing O2 flow. When R was in 10%—50%, the concentration of oxygen varied slowly, being help for the control of film growth. With the structural characterization and measurement of optical properties, we revealed the role of growth temperature and O2 flow in the growth of ZnO film. The results showed by controlling the deposition temperature, a high-quality film with the composition close to stoichiometric ZnO was fabricated on Si (001) substrate at 750°C when the flow ratio of O2 to Ar+ O2 is 37.5%and ultraviolet photoluminescence was detected at room temperature.
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