Study On Preparation And Optical And Electrical Properties Of CdIn₂O₄ Thin Film

CdIn2O4(CIO)thin film,n-type ternary mental oxides thin film materials, has attracted much attention for its excellent optical and electrical properties and foreground for comprehensive application, and become a hot point in the research field of transparent conducting oxides(TCO) thin film. At present, the direct-current (DC) reactive magnetron sputtering method is widely used in preparing TCO thin film in business while few studies on high quality CIO thin film prepared in this method were reported. The key factor which has impeded application of CIO thin film in practice is the lack of low cost and large-area commercialized preparation technology. Therefore, in this paper, based on the review of the development of CIO thin film both at home and abroad, adopting the methods of experimental research and theoretical analysis, the preparing conditions and the optical and electrical properties of CIO thin film were studied deeply.In this paper, CIO thin film was prepared by DC reactive magnetron sputtering method in JGP450 type high vacuum magnetron sputtering apparatus, the surface morphology and structure of the CIO thin film were analyzed by AFM, XRD and XPS. The results indicate that the CIO thin film is polycrystalline structure and its surface roughness is 1.6nm～2.4nm, with the crystalline size being 13nm～35nm and very clear grain boundary. The CIO thin film consists of CIO phase and In2O3 phase, some samples still contain minimal CdO phase as well, Cd,In,O and C elements are included in CIO thin film which is in oxygen-deficient state.The optical and electrical properties of the CIO thin film prepared in different preparing conditions were analyzed by Hall testing apparatus and double-light ultraviolet and visible photometer and so on, experiment results show that the electrical property is improved with the decrease of oxygen concentration and the increase of substrate temperature and the proper prolongation of the time; while the optical property is improved with the increase of oxygen concentration and the increase of substrate temperature and the proper prolongation of the time. The optical and electrical properties and crystal degree of CIO thin film are improved after being annealed in N2.The relationship between optical and electrical properties and preparing conditions was summarized from lots of experiment data. It is recommended that the optimal preparing conditions of CIO thin film by DC magnetron sputtering method are that...