Research Of The Sol-Gel Method Preparation And Ferroelectric Capability Of High Zr/Ti Ratio PZT Film

In the past half century, the development of science and manufactory show that the development of electronics influence every field of our society deeply. But in the development of electronics, what is the most important is that under the instruction of theoretical research, new instruments and new materials are fabricated. Film science is one of the quite important fields in which new instruments and new materials are developed.Ferroelectric films appeared several decades ago. But they have not been extensively taken into account, studied and developed until recently. Ferroelectric films can be applied to electric technology, laser technology, infrared detection technology, optical detection technology and other aspects of engineering technology. Pb(Zr,Ti)O3(usually abbreviated as PZT) , one of ferroelectric films, appeared in the beginning of the fiftieth. Because varying the ratio of Zr/Ti or adding impurities can improve its properties, PZT was focused by the scientists all over the world.Based on the previous experimental theories, we first study the properties of the PZT thin film the ratio Zr/Ti of which is 95/5 in this thesis. In our experiment, the structure of the PZT thin film sample is Ag/PZT/LNO/Si. Si is the substrate. Ag and LNO are the top electrode and the bottom electrode separately. LNO thin film is deposited on the substrate by Sol-Gel. And PZT thin film is epitaxially deposited on the bottom electrode also by Sol-Gel. Subsequently, we measure the crystallization, ferroelectric properties, and study the influences of annealing temperature on the properties of PZT thin film. X-ray diffraction show that under opium conditions, PZT thin film can have good crystallization and obvious orientation. Hysteresis loop also show that the film has good ferroelectric properties.