Monte Carlo Simulation In Coulomb Blockade Of SET

According to Moore's Law of development, the advanced technology is a feature size of 0.25 microns. and 0.18 nanometer, and even gradually being put into production in 0.13 micron technology. According to ITRS-2001 forecast 50 nanometer production technology will mature at around 2009, and 20 nanometer technology will appear in 2017 or so. When integrated circuit technology in the development of 50-nanometer, conventional silicon technology will be to push the limits and is no longer applicable. IC technologies such as various aspects of device structure, processing technologies and material selection so there will be major changes. Some new Quantum and nano-electronic devices, such as tunneling diodes, the single-electron devices, Carbon Nanotubes Nano-size devices such as the new device gradually become a hot spot. With solid-state device toward small-scale, low-dimensional direction, it entered a new and Quantum theory dominated by the micro-world and become a quantum structure. Therefore, the solid-state technology has evolved into a device from the artificial structure with quantum effect of the technical. This not only electronics, photonical information technology has provided new opportunities for development, but also a new challenge.Single-electron transistor (Single-Electron Transistors abbreviated as SET) as the basic unit of integrated circuits, transistors progress, will lead the new electronic technology a revolution. Because of its fundamental tenets of differences in the more traditional transistors, single-electron transistors could be even larger scale integration, its size can be reduced to 1% of the original power requirements can be reduced to the original 10-6, or even more. It's very low power consumption solve integration problems destabilizing factors. Its high degree of integration may go far beyond the current large-scale integration of the limit, and achieved the Heisenberg uncertainty principle set limits and the future can not be replaced by the new devices.This study is to use the Monte Carlo method, single-electron devices SET certain geometrical and physical conditions of the I-V device relations and other parameters, and the results were explained to the understanding of physical phenomena and electrical properties, Extraction and optimize device parameters, device characteristics and study the dependence of parameters.