Study On Characteristics Of The Reaction Ion Beam Etching Of Holographic Grating

This thesis is concentrated on method of ion beam etching grating and the theoretical and experimental research on evolution of graph of etching process is developed. The main work of the thesis includes:Firstly, the technology of ion beam etching and common Kaufman ion source system is introduced, this article also discusses the main technical parameter on ion beam etching process, expounds the common phenomenon which appears in ion beam etching process, such as faced,grooving and redeposit etc, analyzes its producing mechanism and gives solving methods. Meanwhile, etching characteristic of quartz,photoresist and chromium in gas Ar and CHF3 medium is systematic studied, ion energy,beam current density and the effect of incident angle of particle beam on etching rate are analyzed.Some familiar algorithm about simulation of graph evolution on process of etching is introduced. On the basis of ignoring effect of redeposit,faced and twice etching, by line-segment-algorithm an ideal program of ion beam etching graphic evolution is established and its feasibility is verified. Then the law of graphic evolution in the Ar ion beam and CHF3 reaction beam etching is simulated, and we find that by using of CHF3 reaction beam etching photoresist, the side wall substrate profile could be obtained.The evolution law of the fiber grating etching is studied, which quite consistent with the experiment result. Focusing on the problem of controlling groove depth and duty cycle the process of CHF3 reaction beam etching, one method of combination ion beam etching and reaction ion beam etching is proposed, which is applied in controlling groove depth and duty cycle, moreover ,this method could be well adapted to photoresist grating mask of lager fringe density and provide feasible etching scheme for ion beam etching of fiber grating phase mask.