Study On The ZnO: Al/Al Back Reflectors Of PIN A-Si: H Solar Cell

At present, The main problems of PIN a-Si:H solar cells are the low conversion efficiency and the poor stability. The ZnO:Al/Al back reflectors of PIN a-Si:H solar cells can increase the reflection of the light , it will increase the absorption of the light in I layer. If we want to get the same conversion efficiency, the cell with ZnO:Al/Al back reflectors can allow us using thinner I layer so as to improve the stability of the cells. The main problem of study on ZnO:Al/Al back reflecters is the matching of n-layer and ZnO:Al.The aim of this paper is to find the best matching condition of n-layer and ZnO:Al layer.Firstly, we studied the deposition conditions of n-layer. In the experiment, we fixed magnetron sputtering conditions and change the deposition conditions of n-layer to investigate the performance change of the cell. At last we found the best deposition conditions of n-layer.Secondly, we studied the sputtering conditions of the ZnO:Al film. In the experiment, we fixed the deposition conditions of the cells and change the sputtering conditions of the ZnO:Al films. We found the best sputtering conditions of the ZnO:Al film through the evolution of the cells performance. At last we found the best matching condition of n-layer and ZnO:Al film.At last, we studied the practical applications of the ZnO:Al/Al back reflectors. In the experiment , we apply the ZnO:Al/Al back reflecters in the cells which were produced by Tianjin Jinneng Solar CELL CO.,LTD. By studying the performance change of the cells, we found the best sputtering conditions of the ZnO:Al film.