Preparation, Property And Application Of Tin Sulfide And Their Complex Thin Films

In this thesis,SnS₂,SnS and their complexes nanomaterials were prepared by hydrothermal procedure.The related thin films and solar cells of SnS₂,SnS and their complexes were prepared by dip-coating procedure.The nanomaterials were characterized by XRD and TEM.The UV-Vis,UV-Vis-NIR spectra of thin films were recorded,and the optical band gap of thin films were calculated.The electrochemical impedance spectroscopy of the thin films and the photovoltaic performances of the solar cells were measured.The results showed that Sn₂S₃,and lattice substitute were found when Sn(â…¡) and Cu(â…¡) were doped to SnS₂,while lattice defects and Cu₄SnS₄ were found when Sn(â…£) and Cu(â…¡) were doped to SnS.The absorption threshold of SnS₂ and its complexes thin films were around 500 nm,while SnS and its complexes thin films were around 1000 nm.The indirect band gap of SnS₂ and direct band gap of SnS were related to the doped ions and the amounts.There were different interface transfer resistance and transmission time of electrons of different thin films. FTO/SnS₂:Cu(â…¡)/SnS/Sn thin film solar cell gave short circuit photocurrent density of 37.5μA/cm²,open circuit voltage of 130 mV,fill factor of 0.35,and the photoelectric conversion efficiency of 0.05%.