The Growth Of ZnO Films By MOCVD And The Study Of Photodetectors Fabricated On ZnO Films

ZnO, with a band gap of 3.37 eV and a binding energy of exciton as high as 60 meV at room temperature (RT), has attracted much research interest as a strong candidate for ultraviolet light emitting diode and lasing diode. ZnO alloying with MgO can realize MgZnO alloy which permits the band gap to be controlled from 3.37 eV to 7.8 eV. As an excellent ultraviolet optoelectronic material, MgZnO has become a focus extenxive research. In this thesis, based on the introduction of past and current research on MgZnO films and MgZnO-based photodetectors, we deposited MgZnO thin films and prepared MgZnO-based photodetectors. The main results were obtained as follows:(1) C-axis preferred oriented ZnO film with wurtzite structure was prepared on quartz by Metal Organic Chemical Vapour Deposition. The structure and optical properties have been studied. Metal-semiconductor-metal (MSM) photoconductive detector was fabricated on ZnO film. The performance of the Photodetector has been measured and studied.(2) Wurtzite MgZnO films with different Mg content were prepared on sapphire substrate by Metal Organic Chemical Vapour Deposition. The properties of the samples were investigated. Metal-semiconductor-metal (MSM) Photodetector was fabricated on MgZnO films. The performance of the Photodetector has been measured and studied.