| ZnO thin films with smooth surface and high c-axis orientation were prepared by pulsed filtered cathodic vacuum arc deposition system. The effects of the parameters of negative substrate bias, substrate temperature,oxygen pressure and annealing temperature in air were studied respectively.We investigated the surface morphology, structure and the strain along c-axis. The results of this work aresummarized as follow:1. ZnO thin films were prepared by PFCVAD under different parameter ofnegative substrate bias (400V～800V) and fixed parameter of substrate temperature 300℃and oxygen pressure 4.0×10-2Pa.All the ZnO films have high orientation along c-axis and smooth surface. With the increment of negative substrate bias, RMS roughness of ZnO films increased.Their interior strain along c-axis are strongly correlated to the negative substrate bias.The prepared films exhibited only tensile stress and the tensile stress increased with the increment of the negative substrate bias.It is found that ZnO films have the highest orientation along c-axis when negative substrate bias is about 400V.2.When substrate temperature is from 300℃to 500℃and negative substrate bias is at 400V and oxygen pressure is at 4.0×10-2Pa ,the ZnO films have high orientation along c-axis and smooth surface. With the increment of substrate temperature, RMS roughness of ZnO films decreased and compactibility was improved.The prepared films exhibited only tensile stress along c-axis and the tensile stress decreased with the increment of the substrate temperature. It is found that ZnO films have the highest orientation along c-axis when substrate temperature is about 400℃.3.All the ZnO films have high orientation along c-axis and smooth surface under different oxygen pressures (1.0×10-2～8.0×10-2Pa) When negative substrate bias is at 400V and substrate temperature is at 400℃.With the increment of oxygen pressures, RMS roughness of ZnO films was decreased and compactibility was improved.The deposited ZnO films exhibited only tensile stress and the tensile stress decreased with the increment of the oxygen pressure. It is found that ZnO films have the highest orientation along c-axis when oxygen pressure is about 1.2×10-2Pa.4.The crystal quality of ZnO films prepared by PFCVAD whose processing parameters of negative substrate bias at 400V,substrate temperature at 400℃,oxygen pressure at 1.2×10-2 was improved by annealing in air. With the increment of annealing temperature, orientation along c-axis was improved and RMS roughness of ZnO films increased and tensile stress along c-axis decreased, When annealing temperature is from 480℃to 600℃, the tensile stress changed into compressive stress. |
PDF Full Text Request