The Deposition And Research Of AIN/Diamond Multilayered Films For High-Frequency Large-power SAW Devices

SAW (Surface acoustic wave, SAW) is the acoustic wave spreads on the elastic surface of this wave, known as elastic surface acoustic wave. As the surface acoustic wave's propagation velocity is over hundreds of thousands of times slower than electromagnetic waves, and it spreads easily on the path of sampling and processing, using surface acoustic wave electronics to simulate a variety of functions, will enable electronic devices to achieve ultra-small as well as multi-functionalAlN is an importantâ…¢-â…¤compound semiconductor material with wide band-gap, which has hexagonal wurtzite structure. Because of their excellent physical properties, AlN thin films were applied in blue-UV emitting materials, epitaxy buffer layer, and SAW device with GHz band. In the aspect of SAW Filter, for CVD diamond have very high SAW velocity, AlN thin films are piezoelectric films with high SAW velocity and good adhesion to CVD diamond. If AlN thin film was deposited on CVD diamond, the multiplayer film has not only high SAW velocity, but also has low temperature modulus (when the SAW device bears of high-power and the temperature rises, but the center frequency is very minor with the temperature power-up drift), which was suitable for SAWF of high frequency.In this paper, highlighted in experiments using RF magnetron sputtering method, by changing the process parameters of the deposition in the silicon substrate to grow high C-axis preferred orientation (002) thin film of aluminum nitride. The AlN thin films are structurally analyzed using techniques such as Bragg X-ray diffraction to determine their crystal structure and composition distribution. We have investigated the deposition of AlN films on Si substrates, the effects of sputtering power, proportion of argon and nitride, sputtering temperature and sputtering pressure on microstructure and electricity performance of AlN thin films are also discussed. AlN/diamond multiplayer structure was prepared by RF magnetic control sputtering. We discussed effects of deposition parameters. Test microstructure of films used XRD,and has proved the AlN film are very suit for SAW.