Epitaxial Graphene On SiC And Molecular Dynamic Simulation Research

Graphene is a two-dimensional carbon atoms closely packed honeycomb lattice structure.This simplest complex material prepared in 2004 shows a variety of excellent physical, chemical, electrical and other characteristics, and is expected to produce a wide application, researchers all over the world plunge into its study. This paper describes mainstream approaches for preparation of graphene nowadays, focusing on the development and advantages of epitaxial growing graphene on silicon carbide.The following micronanoelectronic development is guaranteed by this preparation method without transfering to other substrates.From the current development, preparation of graphene in a large area and high-quality is the premise for intensive study.In this paper, experiment showed that cleaned silicon carbide was annealed in silicon carbide furnace to form graphene at high temperture in ultra-high vacuum condition.AFM, Raman spectroscopy and other tools were used to characterize and estimate the size of graphene. With improvement of experiment conditions, growth ofμm-level size graphene was realized. However, it can't meet the size for follow-up study. It's believed that with a further research to the growth mechanism, growth process such as atmosphere, pressure, temperature, annealing time, and exploring characterization method of graphene, large-scale preparation and characterization of high-quality graphene will soon be achieved. Graphene will play an important role in the following study and practical application.Molecular dynamics simulation software was used to simulate the physical processes: 6H-SiC (000-1) surface was annealed at 1500K, and surface remained carbon atoms formed graphene structure after silicon atoms'evaporating. Pair correlation function showed that with the coverage of surface carbon atoms increase, the number of formed graphene layer increase. By comparing the simulated growth quality of graphene on carbon face and the silicon face on SiC at the same condition, it was found that the quality on carbon-face is better, which is agreed with the experimental report. Atomic adsorption energy was used to explain this phenomenon. Select appropriate surface of SiC will be helpful to the formation of graphene.