Synthesis, Characterization Of Rare Earth Metal Complexes; Preparation, Properties Studies Of Doped ZnO Films

Part 1: Thin films of rare earth metal oxides have been widely used in the fields of optics, microelectronics and magnetism due to their advantages of high dielectric constant, good insulation and chemical stability. A large range of techniques have been used for the deposition of rare earth metal oxide films and can be divided into physical vapor deposition, solution deposition and chemical vapor deposition (MOCVD) three general categories. Of these techniques, MOCVD is particularly well suited to modern manufacturing methods for rare earth metal oxide films. An essential requirement for the MOCVD process is the availability of precursors with the appropriate physical and chemical properties.In this work, four new Schiff Base ligands which were derived from 2-acetyl-indane-1,3-dione-p-methoxyaniline, 2-acetyl-indane-1,3-dione-4-methylaniline, 2-acetyl- indane-1,3-dione-benzoylhydrazide, 2-acetyl-indane-1,3-dione-8-aminoquinoline have been synthesized, and new rare earth metal complexes with these ligands have been synthesized successfully.The complexes obtained were characterized by elemental analysis, IR spectroscopy, 1H NMR, and X-ray single crystal analysis, respectively. Finally, the thermal analysis of the complexes were measured and discussed by Themo Gravimetry (TG) and Differential Scanning Calorimetric (DSC).Part 2: Zinc oxide film has six angular wurtzite'crystal structure which is one kind of direct band-gap semiconductor material, the band gap width is 3.3 eV at room temperature, and its excition binding energy is as high as 60 meV. ZnO film has comprehensive usages and many potential usages due to these outstanding properties, in recent years, more and more researchers have pay attention to it, and it became a research hotspot in semiconductor field.In this work, Sn-doped ZnO films, Ce-doped ZnO films and Pr-doped ZnO films with diffirent doping concentration have been obtained by an organic gel method; the films were deposited from organometallic compound gel by spin coating onto the glass substrates and then heated at 500℃. All the films were characterized by XRD, SEM and EDS. The infrared properties of the films were also measured and discussed by IR-2 Dual-Band Infrared Emissivity Measuring Instrument.