| In this thesis, recent research of the Er3+-doped luminescence materials as well as its applications is reviewed, the main problems in this area are identified, related theories about luminescence of rare earth ions are introduced, and the near infrared and visible luminescen -ce of Er3+-doped borosilicate glasses and silicon oxynitride films have been studied in detailed. The main content and important results of this thesis are as following:A series of Er +-doped borosilicate glasses were prepared by varying the composition. Absorption spectra of four glasses were measured. 1 .51uminescence under the excitation of a 978nm LD and visible luminescence with a 488Ar+ laser were observed. The J-O intensity parameters of the glasses were determined from the experi-mentally measured absorption spectra using Judd-Ofelt theory, respectively. Then the radiative transitions probability A , radiative lifetime and branching ratio of radiative transitions of Er3+ in these glasses were obtained. Using the branching ratio, the emission of 550nm, 660nm and 800nm were discussed.The stimulated emission cross sections of Er3+ at 1.5 P m in these glasses were calculated according to McCumber theory. They are 0.5528X l0-20cm2(15AlY), 0.3987X 10-20cm2 (10A1Y), 0.3808X10' 20cm2 (5A1Y) and 0.3124X 10-20cm2 (OAlYb). The effective band width of Er3+at 1.5 μ m are 75nm(15AlY) 70.9nm(10AlY) 70.1nm(5AlY) and 61.6nm(OAlYb). Above results indicated these Er3+-borosilicate glasses are the promising materials for broadband emission amplifiers for 1.5 μ m.1.5 μrn emission spectra of the Er3+-doped glasses at different temperatures were measured, and the spectra of high-level Stark sublevel of 4I13/2 level were obtained using a simplified model. The dependence of the electron in 4I13/2 level on the measured temperature and the radiative transition property of different Stark sub-level were discussed.The influence of glasses composition on absorption at 980nm and 1.5μm, 1.5μm stimulated emission cross section and J-O intensityparameters were discussed. It was found that they all increase with the increasing of Al2O3 content. Films of Er3+-doped silicon oxynitride were prepared using RF co-sputter technology. Under the excitation of 488Ar-1 laser, emission at 1.5 # m and in the visible range were obtained. The differences of the emission intensity on annealing temperature and times were observed for these two range, which indicated the differences in the bumping mechanisms. Comparing of the ratio of 550nm emission intensity to 525nm in samples annealed at different temperature and times, the results obtained from a fit of the integrated intensity for these two emission indicated the change of radiative transition probability at different energy level are different.
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