Aluminum infiltrated silicon carbide composite exhibits excellent properties such as high thermal conductivity,low coefficient of thermal expansion ( CTE) , high modulus and low density, therefore it has extensive potential applications in electronic packaging. In this paper, finite element software ANSYS is used to simulate the thermal conductivity and pressureless infiltration technique is used to produce aluminum infiltrated silicon carbide composite with high volume fraction of SiC. The influence of interfacial thickness and temperature on thermal conductivity and CTE have been investigated and analysed. The main results are as follows:l.When the proportion of interfacial thickness and SiC particle size is fixed, the particle size has no effect on thermal conductivity of composite. But when other factors are fixed, the thermal conductivity of composite will decrease with the increase of the propotion.2. The thermal conductivity of composite will increase with the increase of interfacial thermal conductivity, and increase more quickly when interfacial thermal conductivity is lower.3. When particle size is fixed, the thermal conductivity of composite will decrease with the increase of interfacial thickness, the experiment result exhibits the same rule as simulation and Hassleman model.4. When particle size is fixed, the experiment result of coefficient thermal expansion of composite will decrease with the increase of interfacial thickness and increase withtemperature.5. Schapery model can be used to calculate the CTE of composite when temperature is lower(50-100C) and Kerner model can be used when temperature is higher (300-450C). The CTE of composite will increased more quickly than that by three models when temperature is between(100-300C).
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