The Study Of Photics Character And Distribution Homogeneity Of Ge In Ge-Doped CZSi Bulk Single Crystal

In this paper, germanium concentration in Ge-dopped silicon bulk single crystals was measured by the methods of indution couple plasma(ICP)direct reading spectrometer, SIMS, SEM-EDX, and the effective segregation coefficent of germanium under the situation of the changed speed was calculated, the result was 0. 62. According to the result, the curves of different Ge concentrations were got.The [Oi] and [Cs] of the different concentration of Ge-doped CZSi single crystals were measured by FTIR , and the spectroscopes were studied . The results indicated that when the concentration of Ge-doped was lower than lwt%,the FTIR spectroscopy was nearly the same as that of CZSi, but with the concentration of Ge-doped increasing, in the spectroscopes of the lower wave number of near 710 cm-1, there appeared a new peak . The spectroscopes of the samples annealed at 650# 850# 1350# had no clear different with those of the unannealed samples, which indicates that the new peak is no relation with strain. Those approved that the peaks related with Ge, and maybe caused by Ge-C or Si-Ge-C system. Using the single crystal X-ray diffraction(SCXRD) method, we got the lattice constant, and found it was more than that of silicon. The images of the single crystals with different Ge concentration were gotten by means of AFM method. The atomic layer patterns of different crystals were gotten.In this paper the band-gaps of the different concentration Ge-doped CZSi were measured, and the band-gap numbers were gotten.