Research On Low Sintering Temperature And Dielectric Properties Of BaTi₄O₉ Microwave Dielectric Ceramics

The paper take the BaTi4O9 microwave ceramics as a research object.Investigate the pre-sinter and manufacture processes of BaTi4O9 ceramics and,the relations between the microstructure as well as crystal structure andmicrowave dielectric performance of BaTi4O9 with kinds of additives and, theinfections to the low temperature sintering and dielectric performance ofBaTi4O9 microwave dielectric ceramics by adding Mn, Zr and single or multipleadditives of low-melting point oxides. The main results of the sets ofexperiments are list as follows: (1) Mn become a compensation in the disfigurement balance,avoiding the alternation of Ti⁴⁺.Thereby a certain quantity of Mn ion can reduce the dielectric cost of BaTi4O9 microwave dielectric ceramic. (2) Single or multiple additive to CuO,Bi₂O₃ and V₂O₅ can carry on the liquid sinter process,accordingly,lower the sintering temperature,the single additive of V₂O₅ has a similar function with that of Mn,the single additive of Bi2O3 worsen the dielectric character.the second phase could be seen from the XRD pattern,believed it is BaBi₄Ti₄O₁₅ that influence the microwave dielectric character. The single additive of Cu produce the oxygen vacancy, thereby arise the leap of dielectric loss. (3) Multiple additive of Bi₂O₃ and V₂O₅ can restrain the developing of BaBi₄Ti₄O₁₅ so as to optimize the dielectric character. Its ideal sintering temperature is 1180℃. during multiple additive of CuO and V₂O₅, V2O5 can compensate the disfigurement brought by additive of CuO. (4) The multiple additive of CuO,Bi₂O₃ and V₂O₅ shows evident effect to lowering the sintering temperature with the good characteristic.