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The Preparation Of Device-Quality Hydrogenated Amorphous Silicon Thin Films By Mwecr-Cvd Assisted By Hot-Wire

Posted on:2006-07-22Degree:MasterType:Thesis
Country:ChinaCandidate:Y D RongFull Text:PDF
GTID:2121360155960781Subject:Materials Physics and Chemistry
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As a new-type functional material, developed in recent 20 years, hydrogenated amorphous silicon thin film (a-Si:H) is increasingly playing an important role in the high-technology field of new energy resources and information display, especially in the photovoltaic electric generation field, is attached importance to by people all over the world. However, now there are so many problems about a-Si:H films such as the low deposition rate, the bad uniformity and the low photo -sensitivity, especially the film's light-induced degradation, that restricts strongly its further development and application. So, the device-quality a-Si:H films'preparation is becoming the key of the its further development and application. In this article, we prepared the a-Si:H films using MWECR-CVD assisted by hot wire(HW),and will study the film's deposition rate, uniformity, photosensitivity and light-induced degradation. On the film's deposition rate, the former members improved the deposition rate by the permanent magnet unit, we study again the effect of the gas pressure, the temperature of HW, the temperature of substrate on the film's deposition rate, and get the parameter according the high deposition rate. Follow, we analyze the effect of the HW and the permanent magnet unit on the film's uniformity. The photoelectric properties of a-Si:H thin films is closely related with H in the films, so, we study the H in the films as the beginning of the study of the films'photosensitivity and light-induced degradation. Firstly, we discuss the change of the H content of the films, the bend mode and the stretch mode. Follow, we discuss the effect of the different HW temperature on the H content and the a-Si:H thin film's microstructure. Finally, we study the effect of the film's light-induced degradation and the change of the film's microstructure corresponding that. The experiments indicate that the permanent magnet unit effects badly the film's uniformity, that the HW assisting helps to improve the film's uniformity and...
Keywords/Search Tags:a-Si:H, hot wire, H content, photosensitivity, light-induced degradation
PDF Full Text Request
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