| Due to its high luminescent efficiency, high stability, high saturation color, and compatibility with silicon based IC process, zinc silicate doped with Mn is of great interests for the researches in recent years. Up to now, there are various techniques to prepare Mn doped zinc silicate (Zn2SiO4: Mn) films, among them, pulsed laser deposition (PLD) method shows some advantages over the others, for example, it is easier to prepare stoichiometric films due to high compositional consistency between the film and the target.In this paper, besides the introduction of the status of research on Zn2SiO4: Mn films, Zn2SiO4: Mn thin films were prepared on silicon wafer using PLD technique. The properties of the films and the effects of growth parameters on the quality of Zn2SiO4: Mn thin films were studied by using X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), Field-emission scanning electron microscope (FESEM), and photoluminescence (PL) spectra techniques. The influence of annealing temperature, laser on and off frequency, laser energy density, substrate temperature, oxygen pressure to the properties of the films were studied, the mechanisms of individual parameter to the properties of the films were also investigated.It was found that the Zn2SiO4: Mn thin films demonstrated best crystalline quality at 1000 °C annealing temperature, films annealed at 900℃ displayed strongest photoluminescent emission at wavelength of 525nm. Optimal thin film was obtained when the laser on and off frequency was 5Hz, a critical threshold value of laser energy density was found to be 3.36 J/cm2, the luminescence intensity reduced with the decrease of laser energy intensity. The substrate temperature could influence the deposition rate, maximal deposition rate (16.1nm/min) and optimal thin film was obtained when the substrate temperature was 300℃. Optimal thin film could be obtained at 10Pa oxygen pressure, a short decay time of 5.9ms was also found at lOPa oxygen pressure.
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