Research On Preparation And Properties Of Magnetron Sputtering Sb-ZnO Thin Film

In this paper, the research actuality status of ZnO thin film's structural character, preparation methods and electrical-optical properties is summarized. The effect of sputtering parameters, annealing parameters and doped Sb2O3 on the structure, optical absorption and electrical properties of ZnO thin film is studied by SEM, XRD, XPS, EDS, UV-Vis spectrophotometer, Hall effect detector, four-point probe electric resistance measurement and direct-current impedance measurement etc.The results of SEM, XRD and EDX show that ZnO thin film possesses good processing stability. ZnO thin film is compact and smooth, while the average size of the fine uniform grains, most of them are c-axis oriented, is about 30-50nm. The average oxygen content of ZnO thin film is over 40at%. Fitful-sputtering helps to improve the orientation and compact extent crystal grains, and to decrease internal stress. The time for making ZnO thin film is decreased to a half by Sub-sectional Cooling. When the substrate temperature is changed from room temperature to 550℃and the gas pressure is varied from 0.1Pa to 30Pa, the structures of ZnO thin films are c-axis oriented multi-crystalline. The landscape orientation growing speed of crystal grains is controlled mainly by depositing speed of Zn and O atoms, while C-axis developing speed is chiefly dominated by depositing speed and activity of Zn and O atoms. ZnO thin film with best surface morphology is obtained when the oxygen partial pressure is 50%. ZnO thin film'surface morphology is optimized and internal stress is decreased after annealing. Besides, after annealing, according to the results of UV-Vis spectrophotometer, the ultraviolet absorption peak narrows and its intensity increases. The ultraviolet absorption edge becomes steep and moves to longer wavelength, and the optical band gap decreases. The optimal quality and ultra-violet absorption property of the ZnO thin film annealed at 450℃are obtained. The element Sb exists in many forms in Sb2O3 doped ZnO thin film: transpositional atoms and compounds such as Sb2O3,Zn7Sb2O14 etc and ZnO crystal grains grow in mixing directions. The UVA absorption of doped ZnO thin film obviously increases. The absorption margin becomes steep and moves to shorter wavelength about 5nm, the visible absorption increases in some sort.