Studies On Altering Character Of Metal-doped CdTe Thin Films By Ion Implant Technique

Owing to its optoelectronic and chemical properties,CdTe is an ideal absorber material for high-efficiency,low-cost polycrystalline thin film.The thesis has investigated the structure,figure and optoelectronic characteristics of CdTe polycrystalline thin films,the performance of doped CdTe,and the influence of their deposition and anneal process.Firstly,The pure CdTe thin films were prepared on different substrates by close space sublimation(CSS) method. We have investigated the influence on the character of CdTe thin films with different conditions and parameters.Secondly,in normal temperature, CdTe thin films are high resistance semiconductor,for improving its electricity capability,we commonly inject benefactor or acceptor impurities into the pure CdTe thin films , the Ion influx technique is a good method among many adulteration means.At present, the literatures on the doped CdTe thin films by the Ion influx technique have a fat lot reports. The aim of the thesis was that the pure CdTe thin films were adulterated by the influx technique with different metals, and then we have investigated its configuration and photoelectricity after the anneal treatment. again, because the Ion influx technique have a little damnification on the skin-deep structure for the CdTe thin films,Among the experiment,we have let the doped CdTe thin films be annealed a hour with N2 atmosphere at 500℃,and then slowly cooled until the room temperature.via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements.Finally,The films were characterized by x-ray diffraction (XRD),scanning electron microscopy(SEM), ultraviolet visible(UV) and the Hall effect measurement. The results show that...