Study On Metal/Oxide,Semiconductor/Oxide Multilayers

This paper formulates the significance and application of nano-multilayers. Due to its excellent properties, multilayers has been a focus of research in micro-electronics and optoelectronics fields.Based on former work, Al/Al₂O₃ and Cr/Cr₂O₃ multilayers (4 ～ 7 bi-layer) were fabricated by vacuum thermal evaporation and natural oxidation on glass substrates. The total thickness of the multilayers is from 100nm to 230nm. At the same time, kinds of semiconductor/oxide multilayers were prepared with intrinsic material and dopant material acting as coating material.Thickness of the films was measured by weighing method, and the electrical characterization of multilayers at room temperature and low temperature was tested by three probe method. The surface morphology was observed by Scanning Electron Microscope (SEM). The composition of the multilayers was measured by Energy Dispersive Spectrometry (EDS). Transmission Electron Microscope (TEM) and X-Ray Diffraction instrument (XRD) were employed to study of the structure of the samples. Transmission was characterized by spectrophotometer. The influences of annealing conditions on surface morphology, optical property and electrical performance were discussed.The experiment results demonstrate that the similar negative resistance effect still exists in multilayers both at room temperature and at 77K. The electrical experiment results show that: with the number of bi-layer or film thickness increment, U/I value and the absolute value of V_I value decrease. With the raising of probe spacing, both U/I value and the absolute value of V_I value increase. U/I value and the absolute value of V_I value of U-I curve at low temperature are higher than those at room temperature for AlAl₂O₃ and...