The Study Of A-Si-H Films Prepared By MWECR CVD

Because a-Si films have many advantages, such as simple technology,cheap material and carry out great area,big scale auto batch produce , high photosensitivity, and so on. At present it gets more and more abroad attention and application.Sub-thesis is mainly on the test and research of the photoelectric properties of a-Si:H thin film deposited by microwave electron cyclotron resonance chemical vapor deposition (MW-ECR CVD) system. Through analyzing thin film's photoelectric properties affected by different technology conditions via LBL and chemical anneal methods, we expect to achieve reasonable technology conditions to combine a-Si:H's excellent photoelectric properties with microcrystal silicon's high stabilities and to produce a-Si:H thin film with a high photosensitivity and low light-induced degradation.The a-Si:H films have special photoelectric properties, and we analyze the effect of technology conditions of LBL method on the photosensitivity of a-Si:H films. There are lots of LBL technology conditions. Based on experiments and theory analysis in the past, here we present the most important technology conditions that affecting photosensitivity: 1,Cycle times, experiments showed that with the increase of cycle times, photosensitivity got worse;2,H dilution ratio, with the continuously increase of H dilution ratio, H's bombardments on the growing surface enhanced continuously too. These bombardments can eliminate high-energy default configurations priorly and leave stable configurations behind. Therefore, growing layer's configurations are impacted; default state density is decreased and photosensitivity is improved.Since SWE is found , it always prevents the a-Si:H films from farther developing. Based on ago theory model and our experiment results, we...