| In recent years, the ferroelectric thin films have been extensively fabricated to all kinds of functional components, owning to their many excellent properties, such as ferroelectric, dielectric, piezoelectric and pyroelectric properties and so on. People hope to manufacture integration component by integrating the ferroelectric thin films with other materials. For example, the lead zirconate titanate (PZT) with exellent ferroelectric properties should be integrated onto silicon substrate at low substrate temperature at which the integration circuit can not be damaged.However the fabrication craft to PZT ferroelectric thin films must generally be processed above 600℃, while the accomplished silicon integrated circuit can only withstand 450℃. The author attempts to prepare PZT thin films with perovskite phase at low substrate temperature (lower than 450℃) by RF magnetron sputtering method. The main results of this work are as following:(1) It is shown that LNO thin films grown on Si (111) substrates presented (110) preferred orientation.(2) PZT thin films with perovskite phase were successfully grown in situ on LNO(110)/Si substrates at low substrate temperature(260 ℃), with analyzing of TD-88A standardized ferroelectric test system, when the measurement voltage is 5V,the remain polarization and leakage current are found to be 23.1 μC/cm2 and 4.21×10-8A, respectively.
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