Preparation And Characterization Of Low Dielectric Film Based On Polyphenylsilsesquioxane

As ultra-large-scale integration (ULSI) of integrated circuits develop, continuing improvement in device density has significantly made the feature size of integrated circuit (IC) device continue to decrease. With feature size reaching beyond submicron, the increase in propagation delay, crosstalk noise, and power dissipation of the interconnect structure become limiting factors for ULSI of integrated circuits. Materials with low dielectric constant are being developed to replace silicon dioxide as interlevel dielectrics, which can cut down the parasitic capacitance between metal lines and availably address above problems. Silsesquioxane (SSQ) in the midst of many low dielectrics has been widely studied in the semiconductor industry .And polyphenylsilsesquioxane(PPSQ) is one of the most promising SSQ materials for intermetal dielectric applications. In this paper, low dielectric films based PPSQ were prepared by a spin-coating technology following a series of processes; then low dielectric nanoporous films based PPSQ were explored through molecular template, which respectively used Twen20 and P-2 as pore generating template. The thermal curing mechanism and property of dielectric films and nanoporous films were also investigated.In this paper, thermal curing process of low dielectric films was monitored by TGA-DTA, and spin coasting process was also investigated. According to those, a technics process of low dielectric films based PPSQ was mapped out.The thermal curing mechanism and property of low dielectric films based PPSQ were studied by FTIR, Gaussian curve fitting and Spectroscopic Ellipsometry. Results shows: second polycondensation between -OH and -OH occurrs during curing processes of low dielectric films, which makes that the nature of PPSQ films substantially changes from amphiphilic to hydrophobic; and with curing temperature ascending, the cage-like structures collapse and transform into network-like structures, therefore, dielectric constant of low dielectric films also increases and the dielectric constant of final films is as low as low as approximately 2.9; after curing at 525°C,the phenyl- of PPSQ occurs oxygenolysis and cage-like structures will also drastically...