Model Study Of The Photoelectric Film For The Bionic Micro-nano Navigation System

The photoelectric films as the important device of the photoelectric film for the bionic micro-nano navigation system, plays an important role in polarized light detection. To design and production of photoelectric films, it is necessary to establish a theoretical model.In this paper, the simulation model of photoelectric device is set up by the methods of theoretical analysis and numerical simulation. Using this model, the photoelectric properties can be simulated by the choice of the technologic parameters and structural parameters of the photoelectric films. The model bases on the simulation of single device, therefore the computation of the electric circuit characteristic and the response time are simplified. It stresses on the simulation of photoelectric current, open circuit voltage, reverse saturation current and other characteristics. At present, we select the simple silicon PN joint as the preliminary simulation object, through revising the corresponding parameters, the model may be used in other photoelectric apparatuses simulation.It takes the semiconductor monocrystalline silicon as the example to simulate, the result demonstrates that the doping density of the diffusion layer should not surpass 10²⁰cm^-3, and the voltage achieves the biggest value under the doping density; the doping density of the base area must be as small as possible; the performance of the device drops with the temperature rising; the shallower proliferated depth is more advantageous to the examination of the bluish and violet lightwave.Because the establishment of the model includes some simplifications of the formulas, the rounding errors in the value computation and some accidental errors in the actual manufacture, so the simulative results have the deviation with the empirical datum. The model is basically same with the Wolf ideal solar cell model in the materials, the elementary theories and the partial hypothetic conditions. Compared with the two results, we find that the values basically tallies under the same original conditions. This model has the certain instruction significance and the practical value in the development of photoelectric transform devices of the project.