VO₂ Thin Films Deposited By Reactive Magnetron Sputtering Method And Its Surface Performance Study

Vanadium dioxide (VO₂) has MIT property of phase transition. This property can be applied in optical-switching devices and products. How to utilize this property has an important research value to fulfill the requirement of smart windows. In this paper, some important characteristics of three vanadium oxides are discussed, experimental plans are designed, sixteen samples are deposited.Deposited samples are analyzed by using the analysis instruments and the analysis software. We have concluded the results as follow. VO₂ thin films can be deposited at the deposition rate between 1.06 (A|°)/s and 2. 22 (A|°)/s. V₂O₅ thin films is easy to be deposited at the little deposition rate such as ≤ 0. 43 (A|°)/s. The samples are deposited on the condition of m(O₂)/m(Ar) ratio between 1:12 and 1:13 with substrate temperature at 250℃, those thin films have high VO₂ component and good crystal structure are tested. By Annealing treatment, oxygen defection can be reduced, the stoichiometry of V/O ratio is increased.According to the experimental results, a set of the optimal parameters has been concluded. The optimal parameters are as follow, target-substrate distance is 5 centimeter, working pressure is 2.2Pa, sputtering power is 190w, m(O₂)/m(Ar) ratio is 1:12.5, substrate temperature is 250℃.