| Thermoelectric material has been the focus of research since it was discovered; the film and micro-area film thermoelectric materials draw more and more attention because it accords with the trend of the micro-electronic industry's development. The electrochemical method to prepare the film and micro-area film thermoelectric materials, which has advantages in equipments, operation, and cost and so on, is regarded as one of the most promising ones. But the research of electrodepositing the film and micro-area film thermoelectric materials is in the phase of improving the performance of the thermoelectric materials without considering the requirements of fabrication of micro-devices. So the electrochemical method to prepare the film and micro-area film thermoelectric materials is not actually applied into practice.In the purpose of fabricating thermoelectric micro-devices, study on electrodeposition of the thin films and micro-zone films Bi2-xTe3+x and Bi2Te3-xSex and the mechanism of additives is carried out in is paper.The techniques of fabricating micro-zone using photo resist film and photo resist SU-8 respectively are groped in the micro-electronic way, micro-zones with different dimensions can be prepared for the need of experiment; a device for vacuum annealing is designed and the technique of using it is also gropedDifferent effects of Cu, stainless steel and Au are compared on electrodepositing the film Bi2Te3, and Au is chosen as the most suitable one.Temperature is researched in the process of electrodepositing the film Bi2Te3 by the cathodic polarizing curves, and 25℃is set as the most appropriate one.After the analysis on different deposition methods from the composition and the morphology of the film Bi2Te3, the constant-potential method is used to electrodeposit the film Bi2Te3.From the composition, morphology, Seebeck coefficient and configuration of the film Bi2Te3, 30mV potential is regarded as the best one at which the film Bi2Te3 is...
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