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Hydrothermal Synthesis Of Sb-containing Complex Oxides And Preparation Of GaSb Via A Reduction Route

Posted on:2008-07-19Degree:MasterType:Thesis
Country:ChinaCandidate:S H JiaoFull Text:PDF
GTID:2121360212997133Subject:Inorganic Chemistry
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The interest in the preparation of nanocrystals is based on that the materials in nanoscale display a wide variety of unusual behavior comparing to the bulk. When the particle sizes decrease into nanoscales, novel electronic, magnetic, optical, chemical, and mechanical propertie are often achieved. The properties of nanoscale magnetic materials remains an area of extensive interest due to inherent scientific interest as well as potential for development of novel and useful materials. The magnetic properties of CuSb2O6 are widely studied because of its unusual magnetic behavior. But to our knowledge, up to now the study of CuSb2O6 is limited to it's bulk material. So we extended our work to the preparation of CuSb2O6 by hydrothermal method and study the properties of nanoscale CuSb2O6 .Our study shows that nanoparticles and nanorods of CuSb2O6 are prepared by hydrothermal method and its high temperatureα-phase is stabilized at room temperature. The average size of the nanoparticles is ca. 13.7 nm. The nanorods, with a width of ca. 20 nm and an aspect ratio of ca. 5, are the agglomerates composing of smaller nanoparticles with an average size of ca. 8.3 nm. Compared with the high temperatureα-phase of bulk sample at 400 K, the lattice of nanophases elongated in ab plane and compressed along c direction. The CuSb2O6 nanoparticles exhibit predominant paramagnetic phenomenon. The difference in magnetic properties of the nanoparticles and nanorods indicates the interfacial interaction of agglomerated nanoparticles.The III-V compound semiconductors are well-known electronic and optical materials.Their technological importance has stimulated the study of their preparation and properties. Crystalline gallium antimonide (GaSb) is a direct band gap material of interest for the production of various emiconductor devices, and IR optical devices. However, most of the methods developed for the preparation of III-V compounds during the past several decades have focused on metallic nitrogen, phosphorus, and arsenic compounds. Few extensions of these methods to the synthesis of gallium antimonide (GaSb) have been reported. The preparation of metallic antimonides is more difficult than that of the corresponding nitrides, phosphides, and arsenides that antimony precursors such as SbH3 and Sb(R)3 (R =Me or Et) are extremely toxic and unstable or unavailable at all. Therefor we want to get gallium antimonide (GaSb) by the chemical reduction of untoxic and stable antimony precursor, GaSbO4.GaSbO4 nanophase is synthesized by hydrothermal method. The chemical reduction performed both in solid phase by H2 or in liquid phase with N2H4·H2O and Zn as reductant. The production of reaction are mixture of Sb, Sb2O3 and GaSb. The further study is needed for chemical reduction of GaSbO4 nanophase and more reducing agent will be try.
Keywords/Search Tags:Sb-containing
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