The Research Of Technique And Mechanism On Ti Film Deposited By Pulsed Laser Deposition

Diamond film is an excellent structural and functional material, which shows high hardness, low friction coefficient, high thermal conductivity, high optical transparency, low permittivity and wide band gap etc. If we deposit diamond film on surface of stainless steel, we can give attention to toughness of stainless steel and strength, hardness and resistance to wear of diamond film. It has very widely application prospect. However, it's very difficult to directly deposit diamond film on the surface of steel substrates. Researchers usually deposit interlayers on surface of steel substrates to solve this problem.In this paper, metal titanium (Ti) is used interlayer to prevent graphite catalysis of Fe.At the same time, Ti is an element which can form carbide strongly, produce interface diffusion reaction with diamond film to create TiC compound, and prevent diffusion between Fe and C. As a result, there is well chemical bond between Ti and diamond film, which can enhance interface combination. Moreover, Ti interlayer can produce intermetallic compounds with steel substrate, to cause substrate and interlayer good combination.Titanium (Ti) film is deposited by pulsed laser deposition (PLD) in this experiment. Systematically research the influence of technique parameter on structure of Ti film. XRD is used to analysis phase structure, SEM is used to analysis surface topograph of film, Ellipsometer is used to measure film thickness, and XPS is used to analysis chemical elements and relative content of surface of Ti film.Compared with metal films deposited by sputter, deposition rate of metal film deposited by pulsed laser deposition (PLD) is much lower, because their deposition mechanism is different. There is certain reflection effect on metal materials toward the laser bean, and the absorption rate is low. When filled with the buffer gas argon during the experiment, crystal quality of Ti film is better than isn't filled. The reason is that the gas molecule collides with particles in the plasma plume, it carries away the excess amount of energy, and follows the crystal formation. It meets the thermodynamics condition. Besides, Ar can effectively reduce resputtering effect of particles, Ti film deposited is thicker than isn't filled. Titanium is very active. In very high vacuum, it still combines oxygen and nitrogen in the air, and produce correlative oxide and nitride. Only go on improving vacuum, it is possible to deposit Ti film. Moreover, the clean situation of chamber wall has important influence on quality of film. We can clean chamber wall with organic solvent, and then roast it long time, it can improve vacuum and reduce the pollution on film. Besides, the clean situation of substrate is also important for quality of film.In addition, we briefly introduce the growth mechanism of Ti film on surface of steel substrate.